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HGT1S20N36G3VLS Datasheet, Fairchild Semiconductor

HGT1S20N36G3VLS igbts equivalent, voltage clamping igbts.

HGT1S20N36G3VLS Avg. rating / M : 1.0 rating-13

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HGT1S20N36G3VLS Datasheet

Features and benefits


* Logic Level Gate Drive
* Internal Voltage Clamp
* ESD Gate Protection
* TJ = 175oC
* Ignition Energy Capable Description This N-Channel IGBT is a .

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Cl.

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TAGS

HGT1S20N36G3VLS
Voltage
Clamping
IGBTs
HGT1S20N36G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
Fairchild Semiconductor

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